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Freescale Semiconductor Technical Data
Document Number: MRF7S19100N Rev. 1, 6/2006
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for CDMA and multicarrier amplifier applications. To be used in Class AB and Class C for PCN - PCS/cellular radio and WLL applications. * Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1000 mA, Pout = 29 Watts Avg., Full Frequency Band, 3GPP Test Model 1, 64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Power Gain -- 17.5 dB Drain Efficiency -- 30% Device Output Signal PAR -- 6.1 dB @ 0.01% Probability on CCDF ACPR @ 5 MHz Offset -- - 38 dBc in 3.84 MHz Channel Bandwidth * Capable of Handling 5:1 VSWR, @ 32 Vdc, 1960 MHz, 100 Watts CW Peak Tuned Output Power * Pout @ 1 dB Compression Point w 100 W CW Features * 100% PAR Tested for Guaranteed Output Power Capability * Characterized with Series Equivalent Large - Signal Impedance Parameters * Internally Matched for Ease of Use * Integrated ESD Protection * Designed for Digital Predistortion Error Correction Systems * 200C Capable Plastic Package * RoHS Compliant * In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel
MRF7S19100NR1 MRF7S19100NBR1
1930 - 1990 MHz, 29 W AVG., 28 V SINGLE W - CDMA LATERAL N - CHANNEL RF POWER MOSFETs
CASE 1486 - 03, STYLE 1 TO - 270 WB - 4 PLASTIC MRF7S19100NR1
CASE 1484 - 04, STYLE 1 TO - 272 WB - 4 PLASTIC MRF7S19100NBR1
Table 1. Maximum Ratings
Rating Drain - Source Voltage Gate - Source Voltage Operating Voltage Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS VDD Tstg TJ Value - 0.5, +65 - 0.5, +10 32, +0 - 65 to +200 200 Unit Vdc Vdc Vdc C C
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Case Temperature 82C, 100 W CW Case Temperature 79C, 29 W CW Symbol RJC Value (1,2) 0.57 0.68 Unit C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955.
(c) Freescale Semiconductor, Inc., 2006. All rights reserved.
MRF7S19100NR1 MRF7S19100NBR1 1
RF Device Data Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1C (Minimum) A (Minimum) IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating 3 Package Peak Temperature 260 Unit C
Table 5. Electrical Characteristics (TC = 25C unless otherwise noted)
Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 320 Adc) Gate Quiescent Voltage (1) (VDS = 28 Vdc, ID = 1000 mAdc, Measured in Functional Test) Drain - Source On - Voltage (VGS = 10 Vdc, ID = 3.2 Adc) Dynamic Characteristics (2) Reverse Transfer Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss Coss -- -- 1.54 553.5 -- -- pF pF VGS(th) VGS(Q) VDS(on) 1 2 0.2 2 2.8 0.24 3 4 0.4 Vdc Vdc Vdc IDSS IDSS IGSS -- -- -- -- -- -- 10 1 500 Adc Adc nAdc Symbol Min Typ Max Unit
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1000 mA, Pout = 29 W Avg., f1 = 1930 MHz, f2 = 1990 MHz, Single - Carrier W - CDMA, 3GPP Test Model 1, 64 DPCH, 50% Clipping, PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Power Gain Drain Efficiency Output Peak - to - Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Input Return Loss Gps D PAR ACPR IRL 16.5 28.5 5.7 -- -- 17.5 30 6.1 - 38 - 12 19.5 -- -- - 36 - 10 dB % dB dBc dB
1. VGG = 2 x VGS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit schematic. 2. Part internally matched both on input and output. (continued)
MRF7S19100NR1 MRF7S19100NBR1 2 RF Device Data Freescale Semiconductor
Table 5. Electrical Characteristics (TC = 25C unless otherwise noted) (continued)
Characteristic Video Bandwidth (Tone Spacing from 100 kHz to VBW) IMD3 = IMD3 @ VBW frequency - IMD3 @ 100 kHz <1 dBc (both sidebands) Gain Flatness in 60 MHz Bandwidth @ Pout = 100 W CW Group Delay @ Pout = 100 W CW, f = 1960 MHz Part - to - Part Phase Variation @ Pout = 100 W CW Gain Variation over Temperature Output Power Variation over Temperature Symbol VBW -- 10 -- Min Typ Max Unit MHz Typical Performances (In Freescale Test Fixture, 50 hm system) VDD = 28 Vdc, IDQ = 1000 mA, 1930 - 1990 MHz Bandwidth
GF Delay G P1dB
-- -- -- -- --
1 2.15 28.8 0.019 0.015
-- -- -- -- --
dB ns dB/C dBm/C
MRF7S19100NR1 MRF7S19100NBR1 RF Device Data Freescale Semiconductor 3
R1 VBIAS + C1 R2
Z6 VSUPPLY C2 C3 Z5 Z12 RF OUTPUT C4 C5 C6
RF INPUT
R3 Z1 C7 Z2 Z3 Z4
Z7
Z8
Z9
Z10 C8
Z11
Z13 DUT VSUPPLY C9 C10 C11
Z1 Z2 Z3 Z4 Z5 Z6 Z7
0.744 0.383 0.600 0.505 1.086 0.452 0.161
x 0.084 x 0.084 x 0.230 x 0.800 x 0.080 x 0.080 x 0.880
Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip
Z8 Z9 Z10 Z11 Z12, Z13 PCB
0.319 x 0.880 Microstrip 0.390 x 0.215 Microstrip 0.627 x 0.084 Microstrip 0.743 x 0.084 Microstrip 1.326 x 0.121 Microstrip Arlon AD250, 0.030, r = 2.5
Figure 1. MRF7S19100NR1(NBR1) Test Circuit Schematic
Table 6. MRF7S19100NR1(NBR1) Test Circuit Component Designations and Values
Part C1 C2, C5, C6, C10, C11 C3, C7 C4, C9 C8 R1 R2 R3 Description 10 F, 35 V Tantalum Capacitor 10 F, 50 V Chip Capacitors 5.1 pF Chip Capacitors 8.2 pF Chip Capacitors 10 pF Chip Capacitor 1 K, 1/4 W Chip Resistor 10 K, 1/4 W Chip Resistor 10 , 1/4 W Chip Resistor Part Number T491D106K035AT GRM55DR61H106KA88L 600B5R1BT250XT 600B8R2BT250XT 600B100BT250XT CRCW12061001F100 CRCW12061002F100 CRCW120610R0F100 Manufacturer Kemet Murata ATC ATC ATC Vishay Vishay Vishay
MRF7S19100NR1 MRF7S19100NBR1 4 RF Device Data Freescale Semiconductor
R2
C3 C4 C5 C6
R1 C1 C2 R3
CUT OUT AREA
C7
C8
C10
MRF7S19100N/NB Rev. 1
C11
C9
Figure 2. MRF7S19100NR1(NBR1) Test Circuit Component Layout
MRF7S19100NR1 MRF7S19100NBR1 RF Device Data Freescale Semiconductor 5
TYPICAL CHARACTERISTICS
D, DRAIN EFFICIENCY (%) -10 PARC (dB) -15 -20 -25 -30 D, DRAIN EFFICIENCY (%) -10 PARC (dB) -15 -20 -25 -30 1500 mA IRL, INPUT RETURN LOSS (dB) IRL, INPUT RETURN LOSS (dB) 19 18 Gps, POWER GAIN (dB) 17 16 15 IRL 14 13 12 PARC 11 1880 1900 1920 1940 1960 1980 2000 2020 -1.7 2040 Gps D 33 32 31 30 VDD = 28 Vdc, Pout = 29 W (Avg.), IDQ = 1000 mA 29 Single -Carrier W-CDMA, 3.84 MHz Channel Bandwidth, PAR = 7.5 dB @ 0.01% Probability (CCDF) -1.4 -1.5 -1.6
f, FREQUENCY (MHz)
Figure 3. Output Peak - to - Average Ratio Compression (PARC) Broadband Performance @ Pout = 29 Watts Avg.
19 18 Gps, POWER GAIN (dB) 17 16 15 14 13 12 11 1880 PARC 1900 1920 1940 1960 1980 2000 2020 IRL D Gps VDD = 28 Vdc, Pout = 47 W (Avg.), IDQ = 1000 mA Single -Carrier W-CDMA, 3.84 MHz Channel Bandwidth, PAR = 7.5 dB @ 0.01% Probability (CCDF) 40 39 38 37 36 -3 -3.1 -3.2 -3.3 2040
f, FREQUENCY (MHz)
Figure 4. Output Peak - to - Average Ratio Compression (PARC) Broadband Performance @ Pout = 47 Watts Avg.
20 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) IDQ = 1500 mA 19 Gps, POWER GAIN (dB) 1250 mA 1000 mA 750 mA 17 -10 VDD = 28 Vdc, f1 = 1955 MHz, f2 = 1965 MHz Two -Tone Measurements, 10 MHz Tone Spacing -20
18
-30 IDQ = 500 mA -40 1000 mA -50 750 mA -60 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 200 1250 mA
16 15
500 mA
VDD = 28 Vdc, f1 = 1955 MHz, f2 = 1965 MHz Two -Tone Measurements, 10 MHz Tone Spacing 10 Pout, OUTPUT POWER (WATTS) PEP 100 200
1
Figure 5. Two - Tone Power Gain versus Output Power
Figure 6. Third Order Intermodulation Distortion versus Output Power
MRF7S19100NR1 MRF7S19100NBR1 6 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
IMD, INTERMODULATION DISTORTION (dBc)
-20 -30 -40
VDD = 28 Vdc, IDQ = 1000 mA f1 = 1955 MHz, f2 = 1965 MHz Two -Tone Measurements, 10 MHz Tone Spacing
IMD, INTERMODULATION DISTORTION (dBc)
-10
-5 -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 1 10 TWO -TONE SPACING (MHz) 100 IM7 -U IM7 -L IM5 -U IM5 -L IM3 -U IM3 -L VDD = 28 Vdc, Pout = 100 W (PEP), IDQ = 1000 mA Two -Tone Measurements (f1 + f2)/2 = Center Frequency of 1960 MHz
3rd Order -50 5th Order -60 7th Order -70 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 200
Figure 7. Intermodulation Distortion Products versus Output Power
1 OUTPUT COMPRESSION AT THE 0.01% PROBABILITY ON CCDF (dB) 0 -1 -2 -3 -3 dB = 47 W -4 -5 20 30 40 -1 dB = 25 W -2 dB = 35 W
Figure 8. Intermodulation Distortion Products versus Tone Spacing
50 Ideal D, DRAIN EFFICIENCY (%) D, DRAIN EFFICIENCY (%) 45 40 35 30 Actual 25 20 50 60
VDD = 28 Vdc, IDQ = 1000 mA f = 1960 MHz, Input PAR = 7.5 dB
Pout, OUTPUT POWER (WATTS)
Figure 9. Output Peak - to - Average Ratio Compression (PARC) versus Output Power
20 19 Gps 18 17 16 15 14 1 10 Pout, OUTPUT POWER (WATTS) CW 100 VDD = 28 Vdc IDQ = 1000 mA f = 1960 MHz 85_C TC = -30_C 25_C -30_C 25_C 85_C
60 50 40 30 20 10 0 300
Gps, POWER GAIN (dB)
D
Figure 10. Power Gain and Drain Efficiency versus CW Output Power MRF7S19100NR1 MRF7S19100NBR1 RF Device Data Freescale Semiconductor 7
TYPICAL CHARACTERISTICS
19 MTTF FACTOR (HOURS X AMPS2) IDQ = 1000 mA f = 1960 MHz 18 Gps, POWER GAIN (dB)
1010
109
17
108
16 VDD = 32 V 15 24 V 14 0 40 80 120 160 200 Pout, OUTPUT POWER (WATTS) CW 28 V
107
106 90
110
130
150
170
190
210
230
250
TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than 10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application.
Figure 11. Power Gain versus Output Power
Figure 12. MTTF Factor versus Junction Temperature
W - CDMA TEST SIGNAL
100 10 PROBABILITY (%) 1 Output Signal 0.1 0.01 0.001 0.0001 0 W-CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ "5 MHz Offset. PAR = 7.5 dB @ 0.01% Probability on CCDF 2 4 6 8 10 Input Signal
-10 -20 -30 -40 -50 (dB) -60 -70 -80 -90 -100 -110 -9 -7.2 -5.4 -ACPR in 30 kHz Integrated BW
3.84 MHz Channel BW
+ACPR in 30 kHz Integrated BW
PEAK -TO-AVERAGE (dB)
Figure 13. CCDF W - CDMA 3GPP, Test Model 1, 64 DPCH, 50% Clipping, Single - Carrier Test Signal
-3.6 -1.8
0
1.8
3.6
5.4
7.2
9
f, FREQUENCY (MHz)
Figure 14. Single - Carrier W - CDMA Spectrum
MRF7S19100NR1 MRF7S19100NBR1 8 RF Device Data Freescale Semiconductor
Zo = 5 f = 2040 MHz
Zsource f = 2040 MHz
f = 1880 MHz
Zload
f = 1880 MHz
VDD = 28 Vdc, IDQ = 1000 mA, Pout = 29 W Avg. f MHz 1880 1900 1920 1940 1960 1980 2000 2020 2040 Zsource W 4.257 - j2.758 4.388 - j2.617 4.521 - j2.560 4.568 - j2.630 4.424 - j2.758 4.124 - j2.800 3.819 - j2.611 3.567 - j2.292 3.525 - j1.844 Zload W 2.143 - j3.408 2.038 - j3.236 1.944 - j3.066 1.858 - j2.898 1.775 - j2.725 1.708 - j2.550 1.643 - j2.387 1.572 - j2.223 1.487 - j2.029
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground.
Input Matching Network
Device Under Test
Output Matching Network
Z
source
Z
load
Figure 15. Series Equivalent Source and Load Impedance MRF7S19100NR1 MRF7S19100NBR1 RF Device Data Freescale Semiconductor 9
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
62 60 Pout, OUTPUT POWER (dBm) 58 P3dB = 51.61 dBm (144.90 W) 56 54 52 50 48 46 30 32 34 36 38 40 42 44 46 Pin, INPUT POWER (dBm) NOTE: Measured in a Peak Tuned Load Pull Fixture Test Impedances per Compression Level Zsource P3dB 4.39 - j5.66 Zload 1.81 - j3.27 P3dB VDD = 28 Vdc, IDQ = 1000 mA Pulsed CW, 12 sec(on), 10% Duty Cycle, f = 1960 MHz P1dB = 50.39 dBm (109.50 W) Actual P6dB = 52.12 dBm (162.60 W) Ideal 62 60 Pout, OUTPUT POWER (dBm) 58 P3dB = 52.20 dBm (165.90 W) 56 54 52 50 48 46 30 32 34 36 38 VDD = 32 Vdc, IDQ = 1000 mA Pulsed CW, 12 sec(on), 10% Duty Cycle, f = 1960 MHz 40 42 44 46 P1dB = 50.94 dBm (124.20 W) Actual P6dB = 52.81 dBm (190.80 W) Ideal
Pin, INPUT POWER (dBm) NOTE: Measured in a Peak Tuned Load Pull Fixture Test Impedances per Compression Level Zsource 4.39 - j5.66 Zload 1.81 - j3.27
Figure 16. Pulsed CW Output Power versus Input Power
Figure 17. Pulsed CW Output Power versus Input Power
MRF7S19100NR1 MRF7S19100NBR1 10 RF Device Data Freescale Semiconductor
NOTES
MRF7S19100NR1 MRF7S19100NBR1 RF Device Data Freescale Semiconductor 11
PACKAGE DIMENSIONS
B E1 E3
2X
A
GATE LEAD
DRAIN LEAD
D1
4X
D e
b1 aaa M C A
4X
D2 c1 H
DATUM PLANE ZONE J
2X
2X
E
F
A1 A2 E2 E5 E4
2X
A
NOTE 7
C
SEATING PLANE
PIN 5
NOTE 8
NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M-1994. 3. DATUM PLANE -H- IS LOCATED AT THE TOP OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE TOP OF THE PARTING LINE. 4. DIMENSIONS "D" AND "E1" DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS .006 PER SIDE. DIMENSIONS "D" AND "E1" DO INCLUDE MOLD MISMATCH AND ARE DETER- MINED AT DATUM PLANE -H-. 5. DIMENSION "b1" DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE .005 TOTAL IN EXCESS OF THE "b1" DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. DATUMS -A- AND -B- TO BE DETERMINED AT DATUM PLANE -H-. 7. DIMENSION A2 APPLIES WITHIN ZONE "J" ONLY. 8. HATCHING REPRESENTS THE EXPOSED AREA OF THE HEAT SLUG. DIM A A1 A2 D D1 D2 D3 E E1 E2 E3 E4 E5 F b1 c1 e aaa INCHES MIN MAX .100 .104 .039 .043 .040 .042 .712 .720 .688 .692 .011 .019 .600 --- .551 .559 .353 .357 .132 .140 .124 .132 .270 --- .346 .350 .025 BSC .164 .170 .007 .011 .106 BSC .004 DRAIN DRAIN GATE GATE SOURCE MILLIMETERS MIN MAX 2.54 2.64 0.99 1.09 1.02 1.07 18.08 18.29 17.48 17.58 0.28 0.48 15.24 --- 14 14.2 8.97 9.07 3.35 3.56 3.15 3.35 6.86 --- 8.79 8.89 0.64 BSC 4.17 4.32 0.18 0.28 2.69 BSC 0.10
4
D3
3
MRF7S19100NR1 MRF7S19100NBR1 12 RF Device Data Freescale Semiconductor
CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC
E5 BOTTOM VIEW
1
2
CASE 1486 - 03 ISSUE C TO - 270 WB - 4 PLASTIC MRF7S19100N
STYLE 1: PIN 1. 2. 3. 4. 5.
MRF7S19100NR1 MRF7S19100NBR1 RF Device Data Freescale Semiconductor 13
MRF7S19100NR1 MRF7S19100NBR1 14 RF Device Data Freescale Semiconductor
MRF7S19100NR1 MRF7S19100NBR1 RF Device Data Freescale Semiconductor 15
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MRF7S19100NR1 MRF7S19100NBR1
Rev. 16 1, 6/2006 Document Number: MRF7S19100N
RF Device Data Freescale Semiconductor

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